STM32F217IGH6V 查看數據表（PDF） - STMicroelectronics
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STM32F217IGH6V Datasheet PDF : 173 Pages
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Electrical characteristics
STM32F21xxx
Table 21. Typical and maximum current consumptions in Standby mode
Typ
Max(1)
Symbol Parameter
Conditions
TA = 25 °C
TA = 85 °C TA = 105 °C Unit
VDD = VDD= VDD =
1.8 V 2.4 V 3.3 V
VDD = 3.6 V
Backup SRAM ON, low-speed
oscillator and RTC ON
3.0
3.4
4.0
Supply current Backup SRAM OFF, low-
IDD_STBY in Standby
speed oscillator and RTC ON
2.4
2.7
3.3
mode
Backup SRAM ON, RTC OFF 2.4 2.6 3.0
15.1
12.4
12.5
Backup SRAM OFF, RTC OFF 1.7 1.9 2.2
9.8
25.8
20.5
µA
24.8
19.2
1. Based on characterization, not tested in production.
Table 22. Typical and maximum current consumptions in VBAT mode
Typ
Max(1)
Symbol Parameter
Conditions
TA = 25 °C
TA = 85 °C
TA =
105 °C
Unit
VDD = VDD= VDD =
1.8 V 2.4 V 3.3 V
VDD = 3.6 V
Backup SRAM ON, low-speed
oscillator and RTC ON
1.29 1.42 1.68
12
Backup
Backup SRAM OFF, low-speed
IDD_VBAT domain supply oscillator and RTC ON
0.62 0.73 0.96
8
current
Backup SRAM ON, RTC OFF
0.79 0.81 0.86
9
Backup SRAM OFF, RTC OFF 0.10 0.10 0.10
5
19
10
µA
16
7
1. Based on characterization, not tested in production.
On-chip peripheral current consumption
The current consumption of the on-chip peripherals is given in Table 23. The MCU is placed
under the following conditions:
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Doc ID 17050 Rev 8
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