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STM32F217RGT7 查看數據表(PDF) - STMicroelectronics

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STM32F217RGT7 Datasheet PDF : 173 Pages
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Electrical characteristics
STM32F21xxx
5.3.9
Internal clock source characteristics
The parameters given in Table 29 and Table 30 are derived from tests performed under
ambient temperature and VDD supply voltage conditions summarized in Table 11.
High-speed internal (HSI) RC oscillator
Table 29. HSI oscillator characteristics (1)
Symbol
Parameter
Conditions
Min Typ Max Unit
fHSI Frequency
-
16
- MHz
User-trimmed with the RCC_CR
register(2)
-
-
1
%
ACCHSI
Accuracy of the HSI
oscillator
Factory-
calibrated
TA = –40 to 105 °C –8
TA = –10 to 85 °C
–4
-
-
4.5 %
4
%
TA = 25 °C
–1
-
1
%
tsu(HSI)(3)
HSI oscillator
startup time
-
2.2 4
µs
IDD(HSI)
HSI oscillator
power consumption
-
60 80 µA
1. VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified.
2. Refer to application note AN2868 “STM32F10xxx internal RC oscillator (HSI) calibration” available from the
ST website www.st.com.
3. Guaranteed by design, not tested in production.
Figure 31. ACCHSI versus temperature
max
6
avg
min
4
2
0
-2
-4
-6
-8
-45 -35 -25 -15 -5 5 15 25 35 45 55 65 75 85 95 105 115 125
Temperature (°C)
MS19012V2
84/173
Doc ID 17050 Rev 8

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