F40NF06(2004) 查看數據表（PDF） - STMicroelectronics
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F40NF06 Datasheet PDF : 9 Pages
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STF40NF06
Table 3: Absolute Maximum ratings
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS
Gate- source Voltage
ID
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
VISO
Insulation Withstand Voltage (DC)
Tstg
Storage Temperature
Tj
Operating Junction Temperature
(1) ISD ≤ 40A, di/dt ≤ 300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX..
(2) Starting Tj=25°C, ID=20A, VDD=30V
( ) Pulse width limited by safe operating area
Table 4: Thermal Data
Rthj-case Thermal Resistance Junction-case Max
Tl
Maximum Lead Temperature For Soldering Purpose
Value
60
60
± 20
23
16
92
30
0.2
10
250
2500
–55 to 175
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
V
°C
5.0
°C/W
275
°C
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 5: Off
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS Drain-source
ID = 250 µA, VGS = 0
60
V
Breakdown Voltage
IDSS
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS= Max Rating, TC= 125°C
1
µA
10
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±100
nA
Table 6: On
Symbol
Parameter
Test Conditions
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA
RDS(on)
Static Drain-source On VGS = 10V, ID = 11.5 A
Resistance
Min.
2
Typ.
Max.
Unit
4
V
0.024 0.028
Ω
2/9
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