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STM32F051T8H6 查看數據表(PDF) - STMicroelectronics

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STM32F051T8H6 Datasheet PDF : 122 Pages
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Electrical characteristics
STM32F051x4 STM32F051x6 STM32F051x8
Low-speed internal (LSI) RC oscillator
Table 39. LSI oscillator characteristics(1)
Symbol
Parameter
Min
Typ
fLSI
Frequency
30
tsu(LSI)(2) LSI oscillator startup time
-
IDDA(LSI)(2) LSI oscillator power consumption
-
1. VDDA = 3.3 V, TA = –40 to 105 °C unless otherwise specified.
2. Guaranteed by design, not tested in production.
40
-
0.75
Max
50
85
1.2
Unit
kHz
µs
µA
6.3.9
PLL characteristics
The parameters given in Table 40 are derived from tests performed under ambient
temperature and supply voltage conditions summarized in Table 20: General operating
conditions.
Table 40. PLL characteristics
Symbol
Parameter
Value
Unit
Min
Typ
Max
fPLL_IN
PLL input clock(1)
PLL input clock duty cycle
1(2)
8.0
40(2)
-
24(2)
60(2)
MHz
%
fPLL_OUT
tLOCK
JitterPLL
PLL multiplier output clock
PLL lock time
Cycle-to-cycle jitter
16(2)
-
-
-
-
-
48
200(2)
300(2)
MHz
µs
ps
1. Take care to use the appropriate multiplier factors to obtain PLL input clock values compatible with the
range defined by fPLL_OUT.
2. Guaranteed by design, not tested in production.
6.3.10
Memory characteristics
Flash memory
The characteristics are given at TA = –40 to 105 °C unless otherwise specified.
Table 41. Flash memory characteristics
Symbol
Parameter
Conditions
Min
tprog 16-bit programming time TA = - 40 to +105 °C
40
tERASE Page (1 KB) erase time TA = - 40 to +105 °C
20
tME Mass erase time
TA = - 40 to +105 °C
20
Write mode
-
IDD Supply current
Erase mode
-
1. Guaranteed by design, not tested in production.
Typ Max(1) Unit
53.5 60
µs
-
40
ms
-
40
ms
-
10 mA
-
12 mA
66/122
DocID022265 Rev 7

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