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STM8S105C6T3(2015) 查看數據表(PDF) - STMicroelectronics

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STM8S105C6T3 Datasheet PDF : 121 Pages
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STM8S105x4/6
Electrical characteristics
10.3.4
Internal clock sources and timing characteristics
Subject to general operating conditions for VDD and TA.
High speed internal RC oscillator (HSI)
Table 33. HSI oscillator characteristics
Symbol
Parameter
Conditions
Min Typ Max
fHSI
Frequency
-
-
User-trimmed with
Accuracy of HSI oscillator
CLK_HSITRIMR register for
gcoivnednitiVoDnDs(a1)nd TA
-
16
-
-
1(2)
ACCHS
HSI oscillator accuracy
(factory calibrated)
tsu(HSI)
HSI oscillator wakeup
time including calibration
VDD
TA
V,
25 °C(3)
VDD= 5 V,
-25°C TA 85 °C
2.95 V VDD 5.5 V,
-40°C TA 125 °C
-
-1.0
-
1.0
-2.0
-
2.0
-3.0(3)
-
3.0(3)
-
-
1.0(2)
IDD(HSI)
HSI oscillator power
consumption
-
-
170 250(3)
1. Refer to application note.
2. Guaranteed by design, not tested in production.
3. Data based on characterization results, not tested in production.
Figure 21. Typical HSI accuracy @ VDD = 5 V vs 5 temperatures
Unit
MHz
%
µs
µA
DocID14771 Rev 15
69/121
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