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STM8S105K4T3(2015) 查看數據表(PDF) - STMicroelectronics

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STM8S105K4T3 Datasheet PDF : 121 Pages
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STM8S105x4/6
Electrical characteristics
Low speed internal RC oscillator (LSI)
Subject to general operating conditions for VDD and TA.
Table 34. LSI oscillator characteristics
Symbol
Parameter
Conditions Min Typ Max Unit
fLSI
Frequency
tsu(LSI) LSI oscillator wakeup time
IDD(LSI) LSI oscillator power consumption
-
110
128
150 kHz
-
-
-
7(1)
µs
-
-
5
-
µA
1. Guaranteed by design, not tested in production.
Figure 23. Typical LSI frequency variation vs VDD@ 4 temperatures
DocID14771 Rev 15
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