STM8S105S6U6C 查看數據表（PDF） - STMicroelectronics

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STM8S105S6U6C

Access line, 16 MHz STM8S 8-bit MCU, up to 32 Kbytes Flash, integrated EEPROM,10-bit ADC, timers, UART, SPI, I²C

STMicroelectronics 

STM8S105xx

Electrical characteristics

Table 48: EMS data

Symbol Parameter

Conditions

Level/

class

VFESD

Voltage limits to be

applied on any I/O pin to

induce a functional

disturbance

VDD = 3.3 V, TA = 25 °C, fMASTER = 16 MHz

(HSI clock), conforming to IEC 61000-4-2

2/B (1)

VEFTB

Fast transient voltage

burst limits to be applied

through 100 pF on VDD

and VSS pins to induce a

functional disturbance

VDD= 3.3 V, TA = 25 °C ,fMASTER = 16 MHz

(HSI clock),conforming to IEC 61000-4-4

4/A (1)

(1)Data obtained with HSI clock configuration, after applying HW recommendations described

in AN2860 (EMC guidelines for STM8S microcontrollers).

10.3.12.3 Electromagnetic interference (EMI)

Emission tests conform to the IEC61967-2 standard for test software, board layout and pin

loading.

Table 49: EMI data

Symbol Parameter Conditions

Unit

General

conditions

Monitored

frequency

band

Max fHSE/fCPU (1)

8 MHz/ 8

MHz

8 MHz/ 16

MHz

SEMI

Peak level

VDD = 5 V,

TA = +25 °C,

LQFP48

package

conforming to

IEC61967-2

0.1 MHz to 13

30 MHz

30 MHz to 23

130 MHz

130 MHz to 1 -4

GHz

14

dBµV

19

-4

SAE EMI

level

2

1.5

—

(1) Data based on characterization results, not tested in production.

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