DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

STM8S105S6T3C 查看數據表(PDF) - STMicroelectronics

零件编号
产品描述 (功能)
生产厂家
STM8S105S6T3C Datasheet PDF : 127 Pages
First Prev 71 72 73 74 75 76 77 78 79 80 Next Last
STM8S105xx
Electrical characteristics
Symbol Parameter
Accuracy of HSI
oscillator (factory
calibrated)
Conditions
Min
VDD = 5 V, TA = 25°C(3) -1.0
VDD = 5 V, 25 °C ≤ TA ≤ -2.0
85 °C
Typ Max Unit
1.0
2.0
2.95 ≤ VDD≤ 5.5 V,-40 °C -3.0(3)
≤ TA ≤ 125 °C
tsu(HSI) HSI oscillator
wakeup time
including calibration
3.0(3)
1.0(2) µs
IDD(HSI) HSI oscillator power
consumption
170 250(3) µA
(1) Refer to application note.
(2) Guaranteed by design, not tested in production.
(3) Data based on characterization results, not tested in production.
Figure 21: Typical HSI accuracy at VDD = 5 V vs 5 temperatures
DocID14771 Rev 9
79/127

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]