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STM8S10XS6U3ATR 查看數據表(PDF) - STMicroelectronics

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STM8S10XS6U3ATR Datasheet PDF : 121 Pages
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Electrical characteristics
STM8S105x4/6
HSI internal RC/fCPU= fMASTER = 16 MHz, VDD = 5 V
Table 30. Peripheral current consumption
Symbol
Parameter
Typ
Unit
IDD(TIM1)
IDD(TIM2)
IDD(TIM3)
IDD(TIM4)
IDD(UART2)
IDD(SPI)
IDD(I2C)
IDD(ADC1)
TIM1 supply current(1)
TIM2 supply current(1)
TIM3 supply current(1)
TIM4 supply current(1)
UART2 supply current (2)
SPI supply current (2)
I2C supply current(2)
ADC1 supply current when converting(3)
230
115
90
30
µA
110
45
65
955
1.
Data based
16 MHz. No
oICn/aOdCifpferroegnrtaiaml mIDeDdm(neoasI/uOrepmaednsttboegtgwlienegn).
reset configuration and timer
Not tested in production.
counter
running
at
2. Data based on a differential IDD measurement between the on-chip peripheral when kept under reset and
not clocked and the on-chip peripheral when clocked and not kept under reset. No I/O pads toggling. Not
tested in production.
3. Data based on a differential IDD measurement between reset configuration and continuous A/D
conversions. Not tested in production.
Current consumption curves
The following figures show typical current consumption measured with code executing in
RAM.
Figure 13. Typ IDD(RUN) vs. VDD HSE user external clock, fCPU = 16 MHz
62/121
DocID14771 Rev 15

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