STP28N60M2 查看數據表（PDF） - STMicroelectronics

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STP28N60M2

N-channel 600 V, 0.135 Ω typ., 22 A MDmesh™ M2 Power MOSFETs in D2PAK, TO-220 and TO-247 packages

STMicroelectronics 

STB28N60M2, STP28N60M2,

STW28N60M2

N-channel 600 V, 0.135 Ω typ., 22 A MDmesh™ M2

Power MOSFETs in D2PAK, TO-220 and TO-247 packages

Datasheet - production data

TAB

3

1

D2PAK

TAB

3

2

1

TO-220

3

2

1

TO-247

Features

Order code

STB28N60M2

STP28N60M2

STW28N60M2

VDS @

TJmax

RDS(on)

max

ID

650 V 0.150 Ω 22 A

• Extremely low gate charge

• Excellent output capacitance (Coss) profile

• 100% avalanche tested

• Zener-protected

Figure 1. Internal schematic diagram

, TAB

Applications

• Switching applications

• LCC converters, resonant converters

AM15572v1

Description

These devices are N-channel Power MOSFETs

developed using MDmesh™ M2 technology.

Thanks to their strip layout and improved vertical

structure, the devices exhibit low on-resistance

and optimized switching characteristics, rendering

them suitable for the most demanding high

efficiency converters.

Order code

STB28N60M2

STP28N60M2

STW28N60M2

Table 1. Device summary

Marking

Package

D2PAK

28N60M2

TO-220

TO-247

Packaging

Tape and reel

Tube

February 2015

This is information on a product in full production.

DocID025254 Rev 3

1/21

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