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STM32F100C8H7BTR(2010) 查看數據表(PDF) - STMicroelectronics

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STM32F100C8H7BTR Datasheet PDF : 84 Pages
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Electrical characteristics
STM32F100x4, STM32F100x6, STM32F100x8, STM32F100xB
5.3.12 I/O port characteristics
General input/output characteristics
Unless otherwise specified, the parameters given in Table 33 are derived from tests
performed under the conditions summarized in Table 8. All I/Os are CMOS and TTL
compliant.
Table 33. I/O static characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Standard I/O input low level voltage
VIL
I/O FT(1) input low level voltage
Standard I/O input high level voltage
VIH
I/O FT(1) input high level voltage
–0.5
–0.5
0.41 (VDD–2)
+1.3
0.42 (VDD–2)
+1
0.28 (VDD–2)
+0.8
0.32 (VDD–2)
+0.75
VDD+0.5
5.5
Standard I/O Schmitt trigger voltage
hysteresis(2)
Vhys
I/O FT Schmitt trigger voltage
hysteresis(2)
200
5% VDD(3)
VSS VIN VDD
Standard I/Os
1
Ilkg Input leakage current(4)
VIN = 5 V
I/O FT
3
RPU Weak pull-up equivalent resistor(5)
VIN VSS
30
40
50
RPD
Weak pull-down equivalent
resistor(5)
VIN VDD
30
40
50
CIO I/O pin capacitance
5
1. FT = 5V tolerant. To sustain a voltage higher than VDD+0.5 the internal pull-up/pull-down resistors must be disabled.
2. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization, not tested in production.
3. With a minimum of 100 mV.
4. Leakage could be higher than max. if negative current is injected on adjacent pins.
5. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This
PMOS/NMOS contribution to the series resistance is minimum (~10% order).
Unit
V
mV
mV
µA
k
k
pF
All I/Os are CMOS and TTL compliant (no software configuration required). Their
characteristics cover more than the strict CMOS-technology or TTL parameters. The
coverage of these requirements is shown in Figure 21 and Figure 22 for standard I/Os, and
in Figure 23 and Figure 24 for 5 V tolerant I/Os.
54/84
Doc ID 16455 Rev 2

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