STM8S207M6T3BTR 查看數據表（PDF） - STMicroelectronics

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STM8S207M6T3BTR

Performance line, 24 MHz STM8S 8-bit MCU, up to 128 KB Flash, integrated EEPROM, 10-bit ADC, timers, 2 UARTs, SPI, I²C, CAN

STMicroelectronics 

STM8S207xx, STM8S208xx

Electrical characteristics

Figure 32. Typ. VDD - VOH @ VDD = 3.3 V (high sink ports)

2

1.75

1.5

1.25

1

0.75

0.5

0.25

0

0

-40˚C

25˚C

85˚C

125˚C

2

4

6

8

10

12

14

IOL [mA]

10.3.7 Reset pin characteristics

Subject to general operating conditions for VDD and TA unless otherwise specified.

Table 41. NRST pin characteristics

Symbol

Parameter

Conditions

VIL(NRST)

VIH(NRST)

VOL(NRST)

RPU(NRST)

tIFP(NRST)

tINFP(NRST)

tOP(NRST)

NRST Input low level voltage (1)

NRST Input high level voltage (1)

NRST Output low level voltage (1)

NRST Pull-up resistor (2)

NRST Input filtered pulse (3)

NRST Input not filtered pulse (3)

NRST output pulse (1)

IOL= 2 mA

1. Data based on characterization results, not tested in production.

2. The RPU pull-up equivalent resistor is based on a resistive transistor

3. Data guaranteed by design, not tested in production.

Min

Typ 1)

Max

-0.3 V

0.7 x VDD

30

55

500

15

0.3 x VDD

VDD + 0.3

0.5

80

75

Unit

V

kΩ

ns

ns

µs

Figure 33. Typical NRST VIL and VIH vs VDD @ 4 temperatures

-40˚C

6

25˚C

5

85˚C

125˚C

4

3

2

1

0

2.5

3

3.5

4

4.5

5

5.5

6

VDD [V]

Doc ID 14733 Rev 12

75/103

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