DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

STM32F091VB 查看數據表(PDF) - STMicroelectronics

零件编号
产品描述 (功能)
生产厂家
STM32F091VB Datasheet PDF : 128 Pages
First Prev 81 82 83 84 85 86 87 88 89 90 Next Last
STM32F091xB STM32F091xC
Electrical characteristics
Equation 1: RAIN max formula
RAIN < f--A---D----C----×------C-----A---D--T-C---S--×------l-n----(---2---N----+----2---) RADC
The formula above (Equation 1) is used to determine the maximum external impedance
allowed for an error below 1/4 of LSB. Here N = 12 (from 12-bit resolution).
Ts (cycles)
Table 58. RAIN max for fADC = 14 MHz
tS (µs)
1.5
0.11
7.5
0.54
13.5
0.96
28.5
2.04
41.5
2.96
55.5
3.96
71.5
5.11
239.5
17.1
1. Guaranteed by design, not tested in production.
RAIN max (k)(1)
0.4
5.9
11.4
25.2
37.2
50
NA
NA
Table 59. ADC accuracy(1)(2)(3)
Symbol
Parameter
Test conditions
ET Total unadjusted error
EO Offset error
EG Gain error
ED Differential linearity error
EL Integral linearity error
fPCLK = 48 MHz,
fADC = 14 MHz, RAIN < 10 k
VDDA = 3 V to 3.6 V
TA = 25 °C
ET Total unadjusted error
EO Offset error
EG Gain error
ED Differential linearity error
EL Integral linearity error
fPCLK = 48 MHz,
fADC = 14 MHz, RAIN < 10 k
VDDA = 2.7 V to 3.6 V
TA = - 40 to 105 °C
ET Total unadjusted error
EO Offset error
EG Gain error
ED Differential linearity error
EL Integral linearity error
fPCLK = 48 MHz,
fADC = 14 MHz, RAIN < 10 k
VDDA = 2.4 V to 3.6 V
TA = 25 °C
1. ADC DC accuracy values are measured after internal calibration.
DocID026284 Rev 4
Typ
Max(4)
Unit
±1.3
±2
±1
±1.5
±0.5
±1.5
LSB
±0.7
±1
±0.8
±1.5
±3.3
±4
±1.9
±2.8
±2.8
±3
LSB
±0.7
±1.3
±1.2
±1.7
±3.3
±4
±1.9
±2.8
±2.8
±3
LSB
±0.7
±1.3
±1.2
±1.7
87/128
99

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]