STM8AP6168TCY 查看數據表（PDF） - STMicroelectronics
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STM8AP6168TCY
STMicroelectronics
STM8AP6168TCY Datasheet PDF : 89 Pages
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STM8AF61xx, STM8AF62xx
Electrical characteristics
Table 28. Programming current consumption
Symbol
Parameter
Conditions
Typ
VDD = 5 V, -40 °C to 150 °C,
IDD(PROG) Programming current erasing and programming data
1.0
or Flash program memory
Max Unit
1.7
mA
Table 29. Typical peripheral current consumption VDD = 5.0 V(1)
Symbol
Parameter
Typ. fmaster =
2 MHz
Typ. fmaster =
16 MHz
IDD(TIM1)
IDD(TIM2)
IDD(TIM3)
IDD(TIM4)
IDD(LINUART)
IDD(SPI)
IDD(I2C)
IDD(AWU)
IDD(TOT_DIG)
IDD(ADC)
TIM1 supply current(2)
TIM2 supply current (2)
TIM3 supply current(2)
TIM4 supply current(2)
LINUART supply current(2)
SPI supply current(2)
I2C supply current(2)
AWU supply current(2)
All digital peripherals on
ADC supply current when
converting(3)
0.03
0.02
0.01
0.004
0.03
0.01
0.02
0.003
0.22
0.93
0.23
0.12
0.1
0.03
0.11
0.04
0.06
0.02
1
0.95
Unit
mA
1. Typical values not tested in production. Since the peripherals are powered by an internally regulated,
constant digital supply voltage, the values are similar in the full supply voltage range.
2. Data based on a differential IDD measurement between no peripheral clocked and a single active
peripheral. This measurement does not include the pad toggling consumption.
3. Data based on a differential IDD measurement between reset configuration and continuous A/D
conversions.
Current consumption curves
Figure 10 to Figure 15 show typical current consumption measured with code executing in
RAM.
Figure 10. Typ. IDD(RUN)HSE vs. VDD
@fCPU = 16 MHz, peripheral = on
10
9
25°C
8
85°C
7
125°C
6
5
4
3
2
1
0
2.5
3
3.5
4
4.5
5
5.5
6
VDD [V]
Figure 11. Typ. IDD(RUN)HSE vs. fCPU
@ VDD = 5.0 V, peripheral = on
10
9
2 5°C
8
8 5°C
7
125°C
6
5
4
3
2
1
0
0
5
10
15
20
25
30
fcpu [MHz]
Doc ID 14952 Rev 6
53/89
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