STM8AF6268TC 查看數據表（PDF） - STMicroelectronics
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STM8AF6268TC
STMicroelectronics
STM8AF6268TC Datasheet PDF : 89 Pages
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Electrical characteristics
STM8AF61xx, STM8AF62xx
10.3.5
Memory characteristics
Flash program memory/data EEPROM memory
General conditions: TA = -40 to 150 °C.
Table 34. Flash program memory/data EEPROM memory
Symbol
Parameter
Conditions
Min Typ Max Unit
VDD
Operating voltage
(all modes, execution/write/erase)
VDD
Operating voltage
(code execution)
fCPU is 0 to 16 MHz
with 0 ws
3.0
-
5.5
V
fCPU is 0 to 16 MHz
with 0 ws
2.6
-
5.5
Standard programming time
(including erase) for byte/word/block
-
tprog
(1 byte/4 bytes/128 bytes)
Fast programming time for 1 block
(128 bytes)
-
-
6 6.6
ms
-
3 3.3
terase Erase time for 1 block (128 bytes)
-
-
3 3.3 ms
Table 35. Flash program memory
Symbol
Parameter
Condition
Min
Max
Unit
TWE
NWE
Temperature for writing and erasing
Flash program memory endurance
(erase/write cycles)(1)
-
TA = 25 °C
-40
1000
150
°C
-
cycles
tRET
Data retention time
TA = 25 °C
40
TA = 55 °C
20
-
years
-
1. The physical granularity of the memory is four bytes, so cycling is performed on four bytes even when a
write/erase operation addresses a single byte.
Table 36. Data memory
Symbol
Parameter
Condition
Min Max Unit
TWE
Temperature for writing and erasing
-40 150 °C
NWE
Data memory endurance(1)
(erase/write cycles)
tRET
Data retention time
TA = 25 °C
300 k
-
TA = -40°C to 125 °C 100 k(2) -
TA = 25 °C
40(2)(3)
-
TA = 55 °C
20(2)(3)
-
cycles
years
1. The physical granularity of the memory is four bytes, so cycling is performed on four bytes even when a
write/erase operation addresses a single byte.
2. More information on the relationship between data retention time and number of write/erase cycles is
available in a separate technical document.
3. Retention time for 256B of data memory after up to 1000 cycles at 125 °C.
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Doc ID 14952 Rev 6
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