STP60N3LH5 查看數據表（PDF） - STMicroelectronics

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STP60N3LH5

N-channel 30 V, 0.0072 Ω, 48 A DPAK, IPAK, TO-220 STripFET™ V Power MOSFET

STMicroelectronics 

STD60N3LH5

STP60N3LH5, STU60N3LH5

N-channel 30 V, 0.0072 Ω, 48 A DPAK, IPAK, TO-220

STripFET™ V Power MOSFET

Features

Type

STD60N3LH5

STP60N3LH5

STU60N3LH5

VDSS

30 V

30 V

30 V

RDS(on) max

0.008 Ω

0.0084 Ω

0.0084 Ω

ID

48 A

48 A

48 A

■ RDS(on) * Qg industry benchmark

■ Extremely low on-resistance RDS(on)

■ Very low switching gate charge

■ High avalanche ruggedness

■ Low gate drive power losses

Application

■ Switching applications

Description

This STripFET™V Power MOSFET technology is

among the latest improvements, which have been

especially tailored to achieve very low on-state

resistance providing also one of the best-in-class

FOM.

3

2

1

TO-220

3

1

DPAK

3

2

1

IPAK

Figure 1. Internal schematic diagram

Table 1. Device summary

Order codes

STD60N3LH5

STP60N3LH5

STU60N3LH5

Marking

60N3LH5

60N3LH5

60N3LH5

Package

DPAK

TO-220

IPAK

Packaging

Tape and reel

Tube

Tube

April 2009

Doc ID 14079 Rev 3

1/16

www.st.com

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