Electrical characteristics
STM32F100xC, STM32F100xD, STM32F100xE
Table 30. Asynchronous non-multiplexed SRAM/PSRAM/NOR read timings(1) (2)
Symbol
Parameter
Min
Max
Unit
tw(NE)
FSMC_NE low time
5THCLK – 1.5 5THCLK + 2 ns
tv(NOE_NE) FSMC_NEx low to FSMC_NOE low
0.5
1.5
ns
tw(NOE)
FSMC_NOE low time
5THCLK – 1.5 5THCLK + 1.5 ns
th(NE_NOE) FSMC_NOE high to FSMC_NE high hold time –1.5
ns
tv(A_NE)
FSMC_NEx low to FSMC_A valid
0
ns
th(A_NOE) Address hold time after FSMC_NOE high
0.1
ns
tv(BL_NE)
FSMC_NEx low to FSMC_BL valid
0
ns
th(BL_NOE) FSMC_BL hold time after FSMC_NOE high 0
ns
tsu(Data_NE) Data to FSMC_NEx high setup time
2THCLK + 25
ns
tsu(Data_NOE) Data to FSMC_NOEx high setup time
2THCLK + 25
ns
th(Data_NOE) Data hold time after FSMC_NOE high
0
ns
th(Data_NE) Data hold time after FSMC_NEx high
0
ns
tv(NADV_NE) FSMC_NEx low to FSMC_NADV low
5
ns
tw(NADV)
FSMC_NADV low time
THCLK + 1.5 ns
1. CL = 15 pF.
2. Preliminary values.
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Doc ID 15081 Rev 7