LL101C-GS18(2006) 查看數據表（PDF） - Vishay Semiconductors
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LL101C-GS18 Datasheet PDF : 5 Pages
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LL101A / 101B / 101C
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Junction temperature
Storage temperature range
Junction to ambient air
on PC board
50 mm x 50 mm x 1.6 mm
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse Breakdown Voltage IR = 10 µA
Leakage current
Forward voltage drop
VR = 50 V
VR = 50V
VR = 50 V
IF = 1 mA
IF = 1mA
IF = 1 mA
IF = 15 mA
Diode capacitance
VR = 0 V, f = 1 MHz
VR = 0 V, f = 1 MHz
Reverse recovery time
IF = IR = 5 mA,
recover to 0.1 IR
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Symbol
Value
Unit
Tj
125
°C
Tstg
- 65 to + 150
°C
RthJA
320
K/W
Part
Symbol
Min
LL101A V(BR)R
60
LL101B V(BR)R
50
LL101C V(BR)R
40
LL101A
IR
LL101B
IR
LL101C
IR
LL101A
VF
LL101B
VF
LL101C
VF
LL101A
VF
LL101B
VF
LL101C
VF
LL101A
CD
LL101B
CD
LL101C
CD
trr
Typ.
Max
Unit
V
V
V
200
nA
200
nA
200
nA
410
mV
400
mV
390
mV
1000
mV
950
mV
900
mV
2.0
pF
2.1
pF
2.2
pF
1
ns
gll101a_01
Figure 1. Typ. IF vs. VF for primary conduction through the
Schottky barrier
gll101a_02
Figure 2. Typ. IF of combination Schottky barrrier and PN junction
guard ring
www.vishay.com
2
Document Number 85626
Rev. 1.2, 03-Mar-06
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