STP9N60M2 查看數據表（PDF） - STMicroelectronics

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STP9N60M2

N-channel 600 V, 0.72 Ω typ., 5.5 A MDmesh II Plus™ low Qg Power MOSFET in DPAK, TO-220 and IPAK packages

STMicroelectronics 

Electrical characteristics

STD9N60M2, STP9N60M2, STU9N60M2

Figure 14. Source-drain diode forward

characteristics

Figure 15. Normalized VDS vs temperature

VSD

(V)

1.4

1.2

1.0

AM15873v1

TJ=-50°C

VDS

(norm)

1.11

1.09

1.07

1.05

ID=1mA

AM15867v1

0.8

0.6

TJ=150°C

TJ=25°C

0.4

0.2

0

0

1

23

4

5 ISD(A)

1.03

1.01

0.99

0.97

0.95

0.93

-50 -25 0 25 50 75 100 125 TJ(°C)

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DocID024399 Rev 2

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