STM32L152CBH6DTR(2013) 查看數據表（PDF） - STMicroelectronics

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STM32L152CBH6DTR
(Rev.:2013)

Ultra-low-power 32-bit MCU ARM®-based Cortex®-M3, 128KB Flash, 16KB SRAM, 4KB EEPROM, LCD, USB, ADC, DAC

STMicroelectronics 

STM32L151x6/8/B, STM32L152x6/8/B

Electrical characteristics

Table 51. USB DC electrical characteristics

Symbol

Parameter

Conditions

Min.(1) Max.(1) Unit

Input levels

VDD

VDI(3)

VCM(3)

VSE(3)

USB operating voltage(2)

Differential input sensitivity

I(USB_DP, USB_DM)

Differential common mode range Includes VDI range

Single ended receiver threshold

3.0

3.6

V

0.2

0.8

2.5

V

1.3

2.0

Output levels

VOL(4)

VOH(4)

Static output level low

Static output level high

RL of 1.5 kΩ to 3.6 V(5)

RL of 15 kΩ to VSS(5)

2.8

0.3

V

3.6

1. All the voltages are measured from the local ground potential.

2. To be compliant with the USB 2.0 full speed electrical specification, the USB_DP (D+) pin should be pulled

up with a 1.5 kΩ resistor to a 3.0-to-3.6 V voltage range.

3. Guaranteed by characterization, not tested in production.

4. Tested in production.

5. RL is the load connected on the USB drivers.

Figure 24. USB timings: definition of data signal rise and fall time

Differen tial

Data L ines

VCR S

Crossover

points

VS S

tf

tr

ai14137

Table 52.

USB: full speed electrical characteristics

Driver characteristics(1)

Symbol

Parameter

Conditions

Min

Max

Unit

tr

Rise time(2)

tf

Fall Time(2)

CL = 50 pF

4

CL = 50 pF

4

20

ns

20

ns

trfm Rise/ fall time matching

tr/tf

90

110

%

VCRS Output signal crossover voltage

1.3

2.0

V

1. Guaranteed by design, not tested in production.

2. Measured from 10% to 90% of the data signal. For more detailed informations, please refer to USB

Specification - Chapter 7 (version 2.0).

Doc ID 17659 Rev 8

89/121

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