STM32L151VBH6 查看數據表（PDF） - STMicroelectronics

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STM32L151VBH6

Ultra-low-power 32-bit MCU ARM®-based Cortex®-M3, 128KB Flash, 16KB SRAM, 4KB EEPROM, LCD, USB, ADC, DAC

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Electrical characteristics

STM32L151x6/8/B STM32L152x6/8/B

6.3.3

Embedded internal reference voltage

The parameters given in the following table are based on characterization results, unless

otherwise specified.

Table 15. Embedded internal reference voltage calibration values

Calibration value name

Description

Memory address

VREFINT_CAL

Raw data acquired at

temperature of 30 °C, VDDA= 3 V

0x1FF8 0078-0x1FF8 0079

Table 16. Embedded internal reference voltage

Symbol

Parameter

Conditions

Min Typ Max

Unit

VREFINT out(1)

IREFINT

Internal reference voltage

Internal reference current

consumption

– 40 °C < TJ < +105 °C 1.202 1.224 1.242

V

-

- 1.4 2.3

µA

TVREFINT Internal reference startup time

-

-

2

3

ms

VVREF_MEAS

VDDA and VREF+voltage during

VREFINT factory measure

-

2.99 3 3.01

V

AVREF_MEAS

Accuracy

value (2)

of

factory-measured

VREF

Including uncertainties

due to ADC and

VDDA/VREF+ values

-

TCoeff(3)

Temperature coefficient

–40 °C < TJ < +105 °C -

ACoeff(3)

Long-term stability

1000 hours, T= 25 °C -

VDDCoeff(3) Voltage coefficient

3.0 V < VDDA < 3.6 V

-

-

±5

mV

25 100 ppm/°C

- 1000 ppm

- 2000 ppm/V

TS_vrefint(3)(4)

ADC sampling time when reading the

internal reference voltage

-

5

10

-

µs

TADC_BUF(3)

Startup time of reference voltage

buffer for ADC

-

-

-

10

µs

IBUF_ADC(3)

Consumption of reference voltage

buffer for ADC

-

- 13.5 25

µA

IVREF_OUT(3)

CVREF_OUT(3)

VREF_OUT output current(5)

VREF_OUT output load

-

-

-

1

µA

-

-

-

50

pF

ILPBUF(3)

Consumption of reference voltage

buffer for VREF_OUT and COMP

-

- 730 1200

nA

VREFINT_DIV1(3) 1/4 reference voltage

VREFINT_DIV2(3) 1/2 reference voltage

VREFINT_DIV3(3) 3/4 reference voltage

-

24 25 26

-

49

50

51 % VREFINT

-

74 75 76

1. Tested in production.

2. The internal VREF value is individually measured in production and stored in dedicated EEPROM bytes.

3. Guaranteed by characterization results.

4. Shortest sampling time can be determined in the application by multiple iterations.

5. To guarantee less than 1% VREF_OUT deviation.

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DocID17659 Rev 12

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