STM32L152CBU6 查看數據表（PDF） - STMicroelectronics

零件编号

产品描述 (功能)

生产厂家

STM32L152CBU6

Ultra-low-power 32-bit MCU ARM®-based Cortex®-M3, 128KB Flash, 16KB SRAM, 4KB EEPROM, LCD, USB, ADC, DAC

STMicroelectronics 

Electrical characteristics

STM32L151x6/8/B STM32L152x6/8/B

6.3.9

Memory characteristics

The characteristics are given at TA = -40 to 105 °C unless otherwise specified.

RAM memory

Table 34. RAM and hardware registers

Symbol

Parameter

Conditions

Min Typ Max Unit

VRM Data retention mode(1) STOP mode (or RESET)

1.65 -

-

V

1. Minimum supply voltage without losing data stored in RAM (in Stop mode or under Reset) or in hardware

registers (only in Stop mode).

Flash memory and data EEPROM

Symbol

Table 35. Flash memory and data EEPROM characteristics

Parameter

Conditions

Min Typ Max(1) Unit

VDD

Operating voltage

Read / Write / Erase

-

1.65

Programming / erasing time for Erasing

-

tprog

byte / word / double word / half-

page

Programming

-

Average current during whole

program/erase operation

-

IDD Maximum current (peak) during TA = 25 °C, VDD = 3.6 V

program/erase operation

-

-

3.28

3.28

300

1.5

3.6 V

3.94

ms

3.94

-

µA

2.5 mA

1. Guaranteed by design.

Table 36. Flash memory, data EEPROM endurance and data retention

Symbol

Parameter

Conditions

Value

Min(1) Typ Max

Unit

Cycling (erase / write)

NCYC(2) Program memory

Cycling (erase / write)

EEPROM data memory

TA = -40°C to

105 °C

tRET(2)

Data retention (program memory) after

10 kcycles at TA = 85 °C

Data retention (EEPROM data memory)

after 300 kcycles at TA = 85 °C

Data retention (program memory) after

10 kcycles at TA = 105 °C

Data retention (EEPROM data memory)

after 300 kcycles at TA = 105 °C

TRET = +85 °C

TRET = +105 °C

1. Guaranteed by characterization results.

2. Characterization is done according to JEDEC JESD22-A117.

10 -

300 -

30 -

30 -

10 -

10 -

-

kcycles

-

-

-

years

-

-

78/133

DocID17659 Rev 12

Share Link: