STM32L151V6H6T 查看數據表（PDF） - STMicroelectronics

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STM32L151V6H6T

Ultra-low-power 32-bit MCU ARM®-based Cortex®-M3, 128KB Flash, 16KB SRAM, 4KB EEPROM, LCD, USB, ADC, DAC

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Electrical characteristics

STM32L151x6/8/B STM32L152x6/8/B

6.3.13 I/O port characteristics

General input/output characteristics

Unless otherwise specified, the parameters given in Table 42 are derived from tests

performed under conditions summarized in Table 13. All I/Os are CMOS and TTL compliant.

Table 42. I/O static characteristics

Symbol

Parameter

Conditions

Min

Typ

Max Unit

VIL Input low level voltage

VIH Input high level voltage

Vhys

I/O Schmitt trigger voltage

hysteresis(2)

-

-

Standard I/O

FT I/O

Standard I/O

FT I/O

VSS ≤VIN ≤VDD

I/Os with LCD

-

-

0.3VDD(1)

-

0.7 VDD

-

-

-

V

-

10% VDD(3)

-

-

5% VDD(4)

-

-

-

±50

VSS ≤VIN ≤VDD

I/Os with analog

-

switches

-

±50

Ilkg Input leakage current (5)

VSS ≤VIN ≤VDD

I/Os with analog

-

switches and LCD

VSS ≤VIN ≤VDD

I/Os with USB

-

-

±50

nA

-

TBD

FT I/O

VDD ≤VIN ≤5V

-

-

TBD

VSS ≤VIN ≤VDD

Standard I/Os

-

-

±50

RPU Weak pull-up equivalent resistor(6)(1)

VIN = VSS

30

45

60

kΩ

RPD Weak pull-down equivalent resistor(6)

VIN = VDD

30

45

60

kΩ

CIO I/O pin capacitance

-

-

-

5

-

pF

1. Tested in production

2. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization.

3. With a minimum of 200 mV. Based on characterization results.

4. With a minimum of 100 mV. Based on characterization results.

5. The max. value may be exceeded if negative current is injected on adjacent pins.

6. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This

MOS/NMOS contribution to the series resistance is minimum (~10% order).

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DocID17659 Rev 12

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