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STM32L151R6H6TR 查看數據表(PDF) - STMicroelectronics

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STM32L151R6H6TR Datasheet PDF : 133 Pages
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Electrical characteristics
STM32L151x6/8/B STM32L152x6/8/B
Symbol
Table 51. USB DC electrical characteristics
Parameter
Conditions
Min.(1)
Max.(1) Unit
Input levels
VDD
VDI(3)
VCM(3)
VSE(3)
USB operating voltage(2)
-
Differential input sensitivity
I(USB_DP, USB_DM)
Differential common mode range Includes VDI range
Single ended receiver threshold
-
3.0
3.6
V
0.2
-
0.8
2.5
V
1.3
2.0
Output levels
VOL(4)
VOH(4)
Static output level low
Static output level high
RL of 1.5 kΩ to 3.6 V(5)
-
RL of 15 kΩ to VSS(5)
2.8
0.3
V
3.6
1. All the voltages are measured from the local ground potential.
2. To be compliant with the USB 2.0 full speed electrical specification, the USB_DP (D+) pin should be pulled
up with a 1.5 kΩ resistor to a 3.0-to-3.6 V voltage range.
3. Guaranteed by characterization results.
4. Tested in production.
5. RL is the load connected on the USB drivers.
Figure 25. USB timings: definition of data signal rise and fall time
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Table 52. USB: full speed electrical characteristics
Driver characteristics(1)
Symbol
Parameter
Conditions
Min
Max
Unit
tr
Rise time(2)
tf
Fall Time(2)
CL = 50 pF
4
CL = 50 pF
4
20
ns
20
ns
trfm
Rise/ fall time matching
tr/tf
90
110
%
VCRS Output signal crossover voltage
1.3
2.0
V
1. Guaranteed by design.
2. Measured from 10% to 90% of the data signal. For more detailed informations, please refer to USB
Specification - Chapter 7 (version 2.0).
92/133
DocID17659 Rev 12

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