STM32F301C8T7(2014) 查看數據表（PDF） - STMicroelectronics

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STM32F301C8T7
(Rev.:2014)

ARM® Cortex®-M4 32-bit MCU+FPU, up to 64 KB Flash, 16 KB SRAM, ADC, DAC, COMP, Op-Amp, 2.0 – 3.6 V

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Electrical characteristics

STM32F301x6 STM32F301x8

6.3.10

Memory characteristics

Flash memory

The characteristics are given at TA = –40 to 105 °C unless otherwise specified.

Table 46. Flash memory characteristics

Symbol

Parameter

Conditions

Min

tprog 16-bit programming time TA–40 to +105 °C

20

tERASE Page (2 KB) erase time TA –40 to +105 °C

20

tME Mass erase time

TA –40 to +105 °C

20

Write mode

-

IDD Supply current

Erase mode

-

1. Guaranteed by design, not tested in production.

Typ Max(1) Unit

-

40

μs

-

40 ms

-

40 ms

-

10 mA

-

12 mA

Table 47. Flash memory endurance and data retention

Symbol

Parameter

Conditions

Value

Min(1)

NEND Endurance

TA = –40 to +85 °C (6 suffix versions)

TA = –40 to +105 °C (7 suffix versions)

10

1 kcycle(2) at TA = 85 °C

30

tRET

Data retention

1 kcycle(2) at TA = 105 °C

10

10 kcycles(2) at TA = 55 °C

20

1. Data based on characterization results, not tested in production.

2. Cycling performed over the whole temperature range.

Unit

kcycles

Years

80/132

DocID025146 Rev 3

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