STM32F301R8U7TR(2014) 查看數據表（PDF） - STMicroelectronics

零件编号

产品描述 (功能)

生产厂家

STM32F301R8U7TR
(Rev.:2014)

ARM® Cortex®-M4 32-bit MCU+FPU, up to 64 KB Flash, 16 KB SRAM, ADC, DAC, COMP, Op-Amp, 2.0 – 3.6 V

STMicroelectronics 

Electrical characteristics

STM32F301x6 STM32F301x8

Prequalification trials

Most of the common failures (unexpected reset and program counter corruption) can be

reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1

second.

To complete these trials, ESD stress can be applied directly on the device, over the range of

specification values. When unexpected behavior is detected, the software can be hardened

to prevent unrecoverable errors occurring (see application note AN1015).

Electromagnetic Interference (EMI)

The electromagnetic field emitted by the device are monitored while a simple application is

executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with

IEC 61967-2 standard which specifies the test board and the pin loading.

Table 49. EMI characteristics

Symbol Parameter

Conditions

Monitored

frequency band

Max vs. [fHSE/fHCLK]

8/72 MHz

Unit

SEMI

Peak level

VDD 3.3 V, TA 25 °C,

LQFP64 package

compliant with IEC

61967-2

0.1 to 30 MHz

30 to 130 MHz

130 MHz to 1GHz

SAE EMI Level

5

6

dBμV

28

4

-

6.3.12

Electrical sensitivity characteristics

Based on three different tests (ESD, LU) using specific measurement methods, the device is

stressed in order to determine its performance in terms of electrical sensitivity.

Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse separated by 1 second) are

applied to the pins of each sample according to each pin combination. The sample size

depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test

conforms to the JESD22-A114/C101 standard.

Table 50. ESD absolute maximum ratings

Symbol

Ratings

Conditions

Packages Class

VESD(HBM)

Electrostatic discharge voltage

(human body model)

TA +25 °C, conforming

to JESD22-A114

All

2

VESD(CDM)

Electrostatic discharge voltage

(charge device model)

LQFP64,

TA +25 °C, conforming WLCSP49

to ANSI/ESD STM5.3.1 UFQFPN32A

ll other

C3

C4

1. Data based on characterization results, not tested in production.

Maximum

value(1)

Unit

2000

V

250

V

500

82/132

DocID025146 Rev 3

Share Link: