STM32F301R6Y6TR 查看數據表（PDF） - STMicroelectronics

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STM32F301R6Y6TR

ARM® Cortex®-M4 32-bit MCU+FPU, up to 64 KB Flash, 16 KB SRAM, ADC, DAC, COMP, Op-Amp, 2.0 – 3.6 V

STMicroelectronics 

Electrical characteristics

STM32F301x6 STM32F301x8

6.3.22

Temperature sensor characteristics

Table 72. TS characteristics

Symbol

Parameter

Min

Typ

TL(1)

VSENSE linearity with temperature

Avg_Slope(1) Average slope

-

±1

4.0

4.3

V25

tSTART(1)

TS_temp(1)(2)

Voltage at 25 °C

Startup time

ADC sampling time when reading the

temperature

1.34

1.43

4

-

2.2

-

1. Guaranteed by design.

2. Shortest sampling time can be determined in the application by multiple iterations.

Max

Unit

±2

°C

4.6

mV/°C

1.52

V

10

µs

-

µs

Table 73. Temperature sensor calibration values

Calibration value name

Description

Memory address

TS_CAL1

TS_CAL2

TS ADC raw data acquired at

temperature of 30 °C,

VDDA= 3.3 V

TS ADC raw data acquired at

temperature of 110 °C

VDDA= 3.3 V

0x1FFF F7B8 - 0x1FFF F7B9

0x1FFF F7C2 - 0x1FFF F7C3

6.3.23

VBAT monitoring characteristics

Symbol

Table 74. VBAT monitoring characteristics

Parameter

Min Typ

R

Q

Er(1)

TS_vbat(1)(2)

Resistor bridge for VBAT

Ratio on VBAT measurement

Error on Q

ADC sampling time when reading the VBAT

1mV accuracy

-

50

-

2

-1

-

2.2

-

1. Guaranteed by design.

2. Shortest sampling time can be determined in the application by multiple iterations.

Max

-

-

+1

-

Unit

KΩ

%

µs

114/135

DocID025146 Rev 6

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