STM32F301R6Y6 查看數據表（PDF） - STMicroelectronics

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STM32F301R6Y6

ARM® Cortex®-M4 32-bit MCU+FPU, up to 64 KB Flash, 16 KB SRAM, ADC, DAC, COMP, Op-Amp, 2.0 – 3.6 V

STMicroelectronics 

Electrical characteristics

STM32F301x6 STM32F301x8

Table 32. Typical and maximum VDDA consumption in Stop and Standby modes

Typ @VDD (VDD = VDDA)

Max(1)

Symbol Parameter

Conditions

2.0 V 2.4 V 2.7 V 3.0 V 3.3 V 3.6 V

TA =

25 °C

TA =

85 °C

TA = Unit

105 °C

Supply

current in

Stop mode

Supply

current in

Standby

mode

IDDA Supply

current in

Stop mode

Supply

current in

Standby

mode

Regulator in run/low-

power mode, all

1.70 1.83 1.95 2.08 2.22 2.37 3.40 5.30 5.5

oscillators OFF

LSI ON and IWDG ON 2.08 2.25 2.41 2.59 2.79 3.01 -

-

-

LSI OFF and IWDG

OFF

Regulator in run/low-

power mode, all

oscillators OFF

1.59 1.72 1.83 1.96 2.10 2.25 2.80 2.90 3.60

µA

0.99 1.01 1.04 1.09 1.14 1.21 -

-

-

LSI ON and IWDG ON 1.36 1.43 1.50 1.60 1.72 1.85 -

-

-

LSI OFF and IWDG

OFF

0.87 0.89 0.92 0.97 1.02 1.09 -

-

-

1. Guaranteed by characterization results.

Table 33. Typical and maximum current consumption from VBAT supply

Symbol

Para Conditions

meter

(1)

Typ.@VBAT

Max.

@VBAT= 3.6V(2)

TA (°C)

Unit

1.65V 1.8V 2V 2.4V 2.7V 3V 3.3V 3.6V 25 85 105

LSE & RTC

ON; “Xtal

mode”

lower

driving

0.41 0.43 0.46 0.54 0.59 0.66 0.74 0.82 -

-

capability;

IDD_VBAT

Backup

domain

supply

current

LSEDRV[1:

0] = '00'

LSE & RTC

ON; “Xtal

mode”

higher

driving

0.65 0.68 0.73 0.80 0.87 0.95 1.03 1.14 -

-

capability;

LSEDRV[1:

0] = '11'

1. Crystal used: Abracon ABS07-120-32.768 kHz-T with a CL of 6 pF for typical values.

2. Guaranteed by characterization results.

-

µA

-

64/135

DocID025146 Rev 6

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