STM32F301C6Y7 查看數據表（PDF） - STMicroelectronics

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STM32F301C6Y7

ARM® Cortex®-M4 32-bit MCU+FPU, up to 64 KB Flash, 16 KB SRAM, ADC, DAC, COMP, Op-Amp, 2.0 – 3.6 V

STMicroelectronics 

STM32F301x6 STM32F301x8

Electrical characteristics

6.3.8

Internal clock source characteristics

The parameters given in Table 44 are derived from tests performed under ambient

temperature and supply voltage conditions summarized in Table 23.

High-speed internal (HSI) RC oscillator

Table 44. HSI oscillator characteristics(1)

Symbol

Parameter

Conditions

Min Typ

fHSI

Frequency

-

-

8

TRIM HSI user trimming step

-

-

-

DuCy(HSI) Duty cycle

-

45(2)

-

TA = -40 to

105°C

-2.8(3)

-

TA = -10 to 85°C -1.9(3)

-

ACCHSI

Accuracy of the HSI oscillator TA = 0 to 85°C

-1.9(3)

-

TA = 0 to 70°C -1.3(3)

-

TA = 0 to 55°C

-1(3)

-

TA = 25°C(4)

-1

-

tsu(HSI) HSI oscillator startup time

-

1(2)

-

IDDA(HSI)

HSI oscillator power

consumption

-

-

80

1. VDDA = 3.3 V, TA = –40 to 105 °C unless otherwise specified.

2. Guaranteed by design.

3. Guaranteed by characterization results.

4. Factory calibrated, parts not soldered.

Max

-

1(2)

55(2)

3.8(3)

2.3(3)

2(3)

2(3)

2(3)

1

2(2)

100(2)

Unit

MHz

%

%

%

µs

µA

Figure 18. HSI oscillator accuracy characterization results for soldered parts



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