STM32F031E4Y7 查看數據表（PDF） - STMicroelectronics

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STM32F031E4Y7

ARM®-based 32-bit MCU with up to 32 Kbyte Flash, 9 timers, ADC and communication interfaces, 2.0 - 3.6 V

STMicroelectronics 

STM32F031x4 STM32F031x6

Electrical characteristics

6.3.4

6.3.5

Table 21. Programmable voltage detector characteristics (continued)

Symbol

Parameter

Conditions Min Typ Max Unit

VPVD6

PVD threshold 6

VPVD7

PVD threshold 7

VPVDhyst(1) PVD hysteresis

IDD(PVD) PVD current consumption

1. Guaranteed by design, not tested in production.

Rising edge

Falling edge

Rising edge

Falling edge

-

-

2.66 2.78 2.9

V

2.56 2.68 2.8

V

2.76 2.88

3

V

2.66 2.78 2.9

V

-

100

-

mV

-

0.15 0.26(1) µA

Embedded reference voltage

The parameters given in Table 22 are derived from tests performed under the ambient

temperature and supply voltage conditions summarized in Table 18: General operating

conditions.

Table 22. Embedded internal reference voltage

Symbol

Parameter

Conditions

Min Typ Max Unit

VREFINT Internal reference voltage –40 °C < TA < +105 °C 1.2 1.23 1.25

V

tSTART

ADC_IN17 buffer startup

time

-

-

- 10(1)

µs

ADC sampling time when

tS_vrefint reading the internal

-

reference voltage

4(1)

-

-

µs

∆VREFINT

Internal reference voltage

spread over the

temperature range

VDDA = 3 V

-

-

10(1)

mV

TCoeff

Temperature coefficient

-

1. Guaranteed by design, not tested in production.

- 100(1) - 100(1) ppm/°C

Supply current characteristics

The current consumption is a function of several parameters and factors such as the

operating voltage, ambient temperature, I/O pin loading, device software configuration,

operating frequencies, I/O pin switching rate, program location in memory and executed

binary code.

The current consumption is measured as described in Figure 13: Current consumption

measurement scheme.

All Run-mode current consumption measurements given in this section are performed with a

reduced code that gives a consumption equivalent to CoreMark code.

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