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STM32F038G6T7 查看數據表(PDF) - STMicroelectronics

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STM32F038G6T7 Datasheet PDF : 102 Pages
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Electrical characteristics
STM32F038x6
Symbol
Parameter
Table 44. I/O static characteristics (continued)
Conditions
Min
Typ
Max
Unit
Weak pull-up
RPU
equivalent resistor
(3)
VIN = VSS
25
40
55
k
Weak pull-down
RPD
equivalent
resistor(3)
VIN = - VDDIOx
25
40
55
k
CIO I/O pin capacitance
-
-
5
-
pF
1. Data based on design simulation only. Not tested in production.
2. The leakage could be higher than the maximum value, if negative current is injected on adjacent pins. Refer to Table 43:
I/O current injection susceptibility.
3. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This
PMOS/NMOS contribution to the series resistance is minimal (~10% order).
All I/Os are CMOS- and TTL-compliant (no software configuration required). Their
characteristics cover more than the strict CMOS-technology or TTL parameters. The
coverage of these requirements is shown in Figure 19 for standard I/Os, and in Figure 20 for
5 V-tolerant I/Os. The following curves are design simulation results, not tested in
production.
64/102
DocID026079 Rev 5

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