STP7NB60FP 查看數據表（PDF） - STMicroelectronics

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STP7NB60FP

N-CHANNEL 600V - 1.0 Ω - 7.2A TO-220/TO-220FP PowerMESH™ MOSFET

STMicroelectronics 

STP7NB60/FP

Table 3. Absolute Maximum Ratings

Symbol

Parameter

VDS

Drain-source Voltage (VGS = 0)

VDGR

Drain- gate Voltage (RGS = 20 kΩ)

VGS

Gate-source Voltage

ID

Drain Current (cont.) at TC = 25 °C

ID

Drain Current (cont.) at TC = 100 °C

IDM (1)

Drain Current (pulsed)

Ptot

Total Dissipation at TC = 25 °C

Derating Factor

dv/dt (2) Peak Diode Recovery voltage slope

VISO

Insulation Withstand Voltage (DC)

Tstg

Storage Temperature

Tj

Max. Operating Junction Temperature

Note: 1. Pulse width limited by safe operating area

2. ISD ≤ 7A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

Table 4. Thermal Data

Symbol

Parameter

Rthj-case

Rthj-amb

Tl

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient Max

Maximum Lead Temperature For Soldering

Purpose

Table 5. Avalanche Characteristics

Symbol

Parameter

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max, δ < 1%)

EAS

Single Pulse Avalanche Energy

(starting Tj = 25 °C; ID = IAR; VDD = 50 V)

Value

STP7NB60

STP7NB60FP

600

600

± 30

7.2

4.1

4.5

2.6

28.8

28.8

125

40

1.0

0.32

4.5

4.5

–

2000

-65 to 150

150

Unit

V

V

V

A

A

A

W

W°/C

V/ns

V

°C

°C

TO-220

1.0

Value

TO220-FP

3.13

62.5

300

Unit

°C/W

°C/W

°C

Max Value

Unit

7.2

A

580

mJ

2/11

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