BAS70-04 查看數據表（PDF） - STMicroelectronics
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BAS70-04 Datasheet PDF : 4 Pages
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BAR 18 / BAS70-04 06
Fig. 2: Reverse leakage current versus reverse
voltage applied (typical values).
IR(µA)
1E+1
1E+0
Tj=100°C
1E-1
Tj=25°C
1E-2
VR(V)
1E-3
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70
Fig. 3: Reverse leakage current versus junction
temperature (typical values)
IR(µA)
5E+2
VR=70V
1E+2
1E+1
1E+0
1E-1
1E-2
0
Tj(°C)
25
50
75 100 125 150
Fig. 4: Junction capacitance versus reverse voltage
applied (typical values).
C(pF)
2.0
1.0
F=1MHz
Tj=25°C
0.1
1
VR(V)
10
100
Fig. 5: Relative variation of thermal impedance
junction to ambient versus pulse duration (alumine
substrate 10mm*8mm*0.5mm).
Zth(j-a)/Rth(j-a)
1.00
δ = 0.5
0.10
δ = 0.2
δ = 0.1
Single pulse
0.01
1E-3
1E-2
tp(s)
1E-1 1E+0
T
δ=tp/T
1E+1
tp
1E+2
Fig. 6: Thermal resistance junction to ambient ver-
sus copper surface under each lead (Epoxy printed
circuit board FR4, copper thickness: 35µm).
Rth(j-a) (°C/W)
350
300
P=0.25W
250
200
150
0
S(Cu) (mm²)
5 10 15 20 25 30 35 40 45 50
3/4
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