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PIC32MX230F064B-I/SS 查看數據表(PDF) - Microchip Technology

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PIC32MX230F064B-I/SS Datasheet PDF : 321 Pages
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PIC32MX1XX/2XX
TABLE 29-11: DC CHARACTERISTICS: PROGRAM MEMORY(3)
DC CHARACTERISTICS
Standard Operating Conditions: 2.3V to 3.6V
(unless otherwise stated)
Operating temperature -40°C TA +85°C for Industrial
-40°C TA +105°C for V-temp
Param.
No.
Symbol
Characteristics
Min. Typical(1) Max. Units
Conditions
Program Flash Memory
D130 EP
Cell Endurance
20,000 —
— E/W
D131 VPR
VDD for Read
2.3
3.6
V
D132 VPEW VDD for Erase or Write
2.3
3.6
V
D134 TRETD Characteristic Retention 20
— Year Provided no other specifications
are violated
D135 IDDP Supply Current during
10
— mA
Programming
TWW Word Write Cycle Time
20
40
µs
D136 TRW Row Write Cycle Time
3
4.5
— ms
(Note 2)
(128 words per row)
D137 TPE
Page Erase Cycle Time
20
— ms
TCE
Chip Erase Cycle Time
80
— ms
Note 1: Data in “Typical” column is at 3.3V, 25°C unless otherwise stated.
2: The minimum SYSCLK for row programming is 4 MHz. Care should be taken to minimize bus activities
during row programming, such as suspending any memory-to-memory DMA operations. If heavy bus loads
are expected, selecting Bus Matrix Arbitration mode 2 (rotating priority) may be necessary. The default
Arbitration mode is mode 1 (CPU has lowest priority).
3: Refer to the “PIC32 Flash Programming Specification” (DS61145) for operating conditions during
programming and erase cycles.
DS61168C-page 252
Preliminary
© 2011 Microchip Technology Inc.

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