STM32F302VC 查看數據表（PDF） - STMicroelectronics

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STM32F302VC

ARM Cortex-M4F 32b MCU+FPU, up to 256KB Flash+48KB SRAM 4 ADCs, 2 DAC ch., 7 comp, 4 PGA, timers, 2.0-3.6 V operation

STMicroelectronics 

Electrical characteristics

STM32F302xx/STM32F303xx

Table 32. Typical and maximum current consumption from VBAT supply

Symbol

Para Conditions

meter

(1)

1.65V

1.8V

Typ @VBAT

2V 2.4V 2.7V

3V

3.3V

3.6V

Max

@VBAT = 3.6 V(2)

TA = TA = TA =

25°C 85°C 105°C

Unit

LSE & RTC

ON; "Xtal

mode" lower

driving

0.48 0.50 0.52 0.58 0.65 0.72 0.80 0.90 1.1 1.5 2.0

capability;

Backup

LSEDRV[1:

0] = '00'

domain

IDD_VBAT supply LSE & RTC

µA

current

ON; "Xtal

mode"

higher

driving

0.83 0.86 0.90 0.98 1.03 1.10 1.20 1.30 1.5 2.2 2.9

capability;

LSEDRV[1:

0] = '11'

1. Crystal used: Abracon ABS07-120-32.768 kHz-T with a CL of 6 pF for typical values.

2. Data based on characterization results, not tested in production.

Figure 13. Typical VBAT current consumption (LSE and RTC ON/LSEDRV[1:0] = ’00’)

















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Doc ID 023353 Rev 5

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