M25P16-VMN6TP 查看數據表（PDF） - Micron Technology

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M25P16-VMN6TP

Micron M25P16 Serial Flash Embedded Memory

Micron Technology 

Micron M25P16 Serial Flash Embedded Memory

Power-Up Timing and Write Inhibit Voltage Threshold Specifi-

cations

Power-Up Timing and Write Inhibit Voltage Threshold Specifications

Table 13: Power-Up Timing and VWI Threshold

Symbol

tVSL

tPUW

VWI

Parameter

VCC(min) to S# LOW

Time delay to write instruction

Write Inhibit voltage

Min

30

1.0

1.0

Max

–

10

2.1

Unit

μs

ms

V

Note: 1. Parameters are characterized only.

If the time, tVSL, has elapsed, after VCC rises above VCC(min), the device can be selected

for READ instructions even if the tPUW delay has not yet fully elapsed.

VPPH must be applied only when VCC is stable and in the VCCmin to VCCmax voltage

range.

PDF: 09005aef8456656c

m25p16.pdf - Rev. J 1/18 EN

40

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