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ST72F324J6TCX 查看數據表(PDF) - STMicroelectronics

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ST72F324J6TCX Datasheet PDF : 194 Pages
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Electrical characteristics
ST72324xx-Auto
Table 99. Dual voltage HDFlash memory (continued)
Symbol
Parameter
Conditions
Min(1) Typ Max(1) Unit
IDD Supply current(3)
IPP VPP current(3)
Write/Erase
Read (VPP = 12V)
Write/Erase
0
µA
200 µA
30 mA
tVPP Internal VPP stabilization time
10
µs
tRET Data retention
TA = 55°C
20
years
NRW Write/Erase cycles
TA = 85°C
100
cycles
TPROG Programming or erasing
TERASE temperature range
-40 25
85
°C
) 1. Data based on characterization results, not tested in production.
t(s 2. VPP must be applied only during the programming or erasing operation and not permanently for reliability
c reasons.
Obsolete Product(s) - Obsolete Produ 3. Data based on simulation results, not tested in production.
158/193
Doc ID 13841 Rev 1

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