M24256-DFMN6G(2012) 查看數據表（PDF） - STMicroelectronics

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M24256-DFMN6G
(Rev.:2012)

256-Kbit serial I²C bus EEPROM

STMicroelectronics 

DC and AC parameters

M24256-BW M24256-BR M24256-BF M24256-DR M24256-DF

Table 14. DC characteristics (M24256-BR, M24256-DR, device grade 6)

Symbol

Parameter

Test conditions(1) (in addition

to those in Table 7)

Min.

Max. Unit

ILI

Input leakage current

(E1,E2, SCL, SDA)

VIN = VSS or VCC, device in

Standby mode

ILO

Output leakage current

SDA in Hi-Z, external voltage

applied on SDA: VSS or VCC

-

±2

µA

-

±2

µA

ICC Supply current (Read)

VCC = 1.8 V, fc= 400 kHz

fc= 1 MHz(2)

-

0.8 mA

-

2.5 mA

ICC0 Supply current (Write)

ICC1 Standby supply current

VIL

Input low voltage

(SCL, SDA, WC)

During tW, VCC = 1.8 V

Device not selected(4),

VIN = VSS or VCC, VCC = 1.8 V

1.8 V ≤ VCC < 2.5 V

-

2(3)

mA

-

1

µA

–0.45 0.25 VCC V

Input high voltage

(SCL, SDA)

VIH

Input high voltage

(WC, E2, E1, E0)

1.8 V ≤ VCC < 2.5 V

1.8 V ≤ VCC < 2.5 V

0.75 VCC 6.5

V

0.75 VCC VCC+0.6 V

VOL Output low voltage

IOL = 1 mA, VCC = 1.8 V

-

0.2

V

1. If the application uses the voltage range R device with 2.5 V < Vcc < 5.5 V and -40 °C < TA < +85 °C,

please refer to Table 13 instead of this table.

2. Only for devices identified with process letter K.

3. Characterized value, not tested in production.

4. The device is not selected after power-up, after a Read instruction (after the Stop condition), or after the

completion of the internal write cycle tW (tW is triggered by the correct decoding of a Write instruction).

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Doc ID 6757 Rev 30

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