JS48F4000P0ZBQ0 查看數據表（PDF） - Numonyx -> Micron
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JS48F4000P0ZBQ0 Datasheet PDF : 99 Pages
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P30
Table 12: DC Current Characteristics (Sheet 2 of 2)
Sym
Parameter
CMOS
Inputs
(VCCQ =
1.7 V - 3.6
V)
TTL Inputs
(VCCQ =
2.4 V - 3.6
V)
Unit
Test Conditions
Notes
Typ Max Typ Max
IPPE VPP Erase Current
0.05
8
0.10
22
0.05
8
0.10
22
VPP = VPPL, erase in progress
mA
VPP = VPPH, erase in progress
Notes:
1.
All currents are RMS unless noted. Typical values at typical VCC, TC = +25 °C.
2.
ICCS is the average current measured over any 5 ms time interval 5 µs after CE# is deasserted.
3.
Sampled, not 100% tested.
4.
ICCES is specified with the device deselected. If device is read while in erase suspend, current is ICCES plus ICCR.
5.
ICCW, ICCE measured over typical or max times specified in Section 7.5, “Program and Erase
Characteristics” on page 39.
6.2
DC Voltage Characteristics
Table 13: DC Voltage Characteristics
Sym
Parameter
CMOS Inputs
(VCCQ = 1.7 V – 3.6 V)
Min
Max
TTL Inputs (1)
(VCCQ = 2.4 V – 3.6 V)
Min
Max
Unit
Test Condition
VIL
Input Low Voltage
0
0.4
0
0.6
V
VIH
Input High Voltage
VCCQ – 0.4 V
VCCQ
2.0
VCCQ
V
VOL
Output Low Voltage
-
VCC = VCCMin
0.1
-
0.1
V VCCQ = VCCQMin
IOL = 100 µA
VOH
Output High Voltage
VCCQ – 0.1
-
VCCQ – 0.1
-
VCC = VCCMin
V VCCQ = VCCQMin
IOH = –100 µA
VPPLK VPP Lock-Out Voltage
-
0.4
-
0.4
V
VLKO VCC Lock Voltage
1.0
-
1.0
-
V
VLKOQ VCCQ Lock Voltage
0.9
-
0.9
-
V
Notes:
1.
Synchronous read mode is not supported with TTL inputs.
2.
VIL can undershoot to –0.4 V and VIH can overshoot to VCCQ + 0.4 V for durations of 20 ns or less.
3.
VPP ≤ VPPLK inhibits erase and program operations. Do not use VPPL and VPPH outside their valid ranges.
Notes
2
3
November 2007
Order Number: 306666-11
Datasheet
27
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