MB84VD22182EG 查看數據表（PDF） - Fujitsu

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MB84VD22182EG

32M (× 8/×16) FLASH MEMORY & 4M (× 8/×16) STATIC RAM

Fujitsu 

MB84VD2218XEG/EH/2219XEG/EH-90

(Continued)

Parameter Symbols

JEDEC Standard

Description

—

tVCS

VCCf Setup Time

—

tVLHT Voltage Transition Time (Note 2)

—

tVIDR

Rise Time to VID (Note 2)

—

tVACCR

Rise Time to VACC

—

tRB

Recover Time from RY/BY

—

tRP

RESET Pulse Width

—

tEOE

Delay Time from Embedded Output Enable

—

tRH

RESET High Level Period Before Read

—

tBUSY Program/Erase Valid to RY/BY Delay

—

tTOW

Erase Time-out Time (Note 3)

—

tSPD

Erase Suspend Transition Time (Note 4)

Min.

50

4

500

500

0

500

—

200

—

50

—

-90

Typ.

—

—

—

—

—

—

—

—

—

—

—

Max.

—

—

—

—

—

—

90

—

90

—

20

Unit

µs

µs

ns

ns

ns

ns

ns

ns

ns

µs

µs

Notes: 1. This does not include the preprogramming time.

2. This timing is for Sector Protection Operation.

3. The time between writes must be less than “tTOW” otherwise that command will not be accepted and

erasure will start. A time-out or “tTOW” from the rising edge of last CE or WE whichever happens first will

initiate the execution of the Sector Erase command(s).

4. When the Erase Suspend command is written during the Sector Erase operation, the device will take a

maximum of “tSPD” to suspend the erase operation.

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