C8051F337-GM(2007) 查看數據表（PDF） - Silicon Laboratories

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C8051F337-GM
(Rev.:2007)

Mixed Signal ISP Flash MCU Family

Silicon Laboratories 

C8051F336/7/8/9

Table 6.6. Internal High-Frequency Oscillator Electrical Characteristics

VDD = 2.7 to 3.6 V; TA = –40 to +85 °C unless otherwise specified; Using factory-calibrated settings.

Parameter

Conditions

Min

Typ

Max

Oscillator Frequency

IFCN = 11b

24

24.5

25

Oscillator Supply Current

(from VDD)

Power Supply Sensitivity

25 °C, VDD = 3.0 V,

OSCICN.7 = 1,

OCSICN.5 = 0

Constant Temperature

—

450

600

—

0.12

—

Temperature Sensitivity

Constant Supply

—

60

—

Units

MHz

µA

%/V

ppm/°C

Table 6.7. Internal Low-Frequency Oscillator Electrical Characteristics

VDD = 2.7 to 3.6 V; TA = –40 to +85 °C unless otherwise specified; Using factory-calibrated settings.

Parameter

Conditions

Min

Typ

Max

Oscillator Frequency

OSCLD = 11b

72

80

88

Oscillator Supply Current

(from VDD)

Power Supply Sensitivity

25 °C, VDD = 3.0 V,

OSCLCN.7 = 1

Constant Temperature

—

5.5

10

—

2.4

—

Temperature Sensitivity

Constant Supply

—

30

—

Units

kHz

µA

%/V

ppm/°C

38

Rev. 0.2

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