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AM0608-200 查看數據表(PDF) - STMicroelectronics

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AM0608-200 Datasheet PDF : 3 Pages
1 2 3
AM0608-200
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
.... REFRACTORY/GOLD METALLIZATION
INTERNAL INPUT MATCHING
METAL/CERAMIC HERMETIC PACKAGE
POUT = 220 W MIN. WITH 8.7 dB GAIN
PRELIMINARY DATA
.400 x .400 2NLFL (S042)
hermetically sealed
ORDER CODE
AM0608-200
BRANDING
0608-200
PIN CONNECTION
DESCRIPTION
The AM0608-200 is an internally-matched, com-
mon base silicon bipolar device optimized pulsed
application in the 600 - 750 MHz frequency range.
Housed in the industry-standard AMPAC™ met-
al/ceramic package, this device uses a refrac-
tory/gold overlay die geometry for ruggedness and
long-term reliability.
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
PDISS
Power Dissipation* (TC 75˚C)
IC
Device Current*
VCC
Collector-Supply Voltage*
TJ
Junction Temperature (Pulsed RF Operation)
TSTG
Storage Temperature
Value
875
Unit
W
16.0
A
55
V
250
°C
65 to +200
°C
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
0.20
°C/W
August 1992
1/3

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