2N3232 查看數據表（PDF） - New Jersey Semiconductor
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2N3232 Datasheet PDF : 2 Pages
| |||
, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2N3232
DESCRIPTION
• Excellent Safe Operating Area
• DC Current Gain-hFE= 18-55@ lc= 3A
• Collector-Emitter Saturation Voltage-
t)= 2.5V(Max)@ lc = 3A
• Collector-Emitter Sustaining Voltage-
: VCEo(sus)= 60V(Min)
APPLICATIONS
• Designed for general purpose power switch and ampl fier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
7
V
lc
Collector Current-Continuous
7.5
A
PC
Collector Power Dissipation@Tc-25 C
117
W
Tj
Junction Temperature
Tstg
Storage Temperature
200
'C
-65-200 •c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
"th j-c Thermal Resistance, Junction to Case
MAX UNIT
1.5 •c/w
1
^
3
yr
ra
2
PIN
l.BASE
2. EMITTER
3. COLLECT OR (CASE)
TO-3 package
•*n * (— N-
•
-1
C
L u: -JU--D 2PL
_*
IT!" -,
L-* f -EB
/^^"~"\ 1
—4fy ci
t
B
t Vc^,/ \ I
\r~ff
nun
DIM Nm MAX
A
39.00
B 25 30 26.67
c
^ 80 8.30
D
0 90 1 10
E
f 40 1 .60
(j
1092
H
S46
K 11 .40 13.50
L 16 75 1705
N 19.40 19.62
_Q_ « 00 420
U 30 00 3020
V
4JSL 4SO
N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. I lowever. N.I Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encouragescustomers to verify that datasheets are current before placing orders.
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