2N6228 查看數據表（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.
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2N6228 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon PNP Power Transistor
DESCRIPTION
·Excellent Safe Operating Area
·High DC Current Gain-
: hFE=15-60(Min)@IC= -3A
·Low Saturation Voltage-
: VCE(sat)= -1.0V(Max)@ IC = -4.5A
APPLICATIONS
·Designed for high power amplifier and switching applications
where high voltages are required.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-140
V
VCEO
Collector-Emitter Voltage
-140
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-6
A
ICM
Collector Current-Peak
-9
A
IB
Base Current-Continuous
-3
A
PC
Collector Power Dissipation @TC=25℃ 150
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.17 ℃/W
SPTECH website：www.superic-tech.com
2N6228
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