2SC3184 查看數據表（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.

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2SC3184

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

2SC3184

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0

800

V

VCE(sat) Collector-Emitter Saturation Voltage IC= 300mA; IB= 60mA

2.0

V

ICBO

Collector Cutoff Current

VCB= 800V; IE= 0

10 μA

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

10 μA

hFE-1

DC Current Gain

IC= 60mA; VCE= 5V

10

40

hFE-2

DC Current Gain

IC= 300mA; VCE= 5V

8

COB

Output Capacitance

IE= 0; VCB= 10V; ftest= 1.0MHz

20

pF

fT

Current-Gain—Bandwidth Product

IC= 1A; VCE= 5V

15

MHz

 hFE-1 Classifications

K

L

M

10-20

15-30

20-40

SPTECH website：www.superic-tech.com

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