2SC3272 查看數據表（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.
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2SC3272 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min)
·Good Linearity of hFE
·Low Saturation Voltage
APPLICATIONS
·Designed for use in color TV chroma output and video
signal amplification.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
300
V
VCEO
Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
Collector Power Dissipation
@ TC=25℃
PC
Collector Power Dissipation
@ Ta=25℃
TJ
Junction Temperature
0.1
A
5
W
1.2
150
℃
Tstg
Storage Temperature Range
-55~150
℃
SPTECH website：www.superic-tech.com
2SC3272
1
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