D45E2 查看數據表（PDF） - New Jersey Semiconductor

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D45E2

PNP POWER DARLINGTON TRANSISTORS

New Jersey Semiconductor 

electrical Characteristics (Tc = 25° C) (unless otherwise specified)

L

CHARACTERISTIC

SYMBOL WIN

TYP

MAX

off characteristics'11

Collector-Emitter Voltage

(lc = -100mA)

D45E1 VCEO

-40

D45E2

-60

—

—

D45E3

-80

Collector Cut-off Current

(VCE = Rated VCES)

Emitter Cutoff Current

(VEB = -7V)

ICES

—

•EBO

—

—

-10

—

-1.0

second breakdown

| Second Breakdown with Base Forward Biased

on characteristics

DC Current Gain

dc = -5A, VCE = -sv)

Collector-Emitter Saturation Voltage

(lc = -5.0A, IB = -10mA)

(IC = -10.0A, IB = -20mA)

Base-Emitter Saturation Voltage

(lc = -5.0A, IB = -10mA)

dynamic characteristics

Collector Capacitance

(VCE = -10V, f = 1MHz)

FBSOA

SEE FIGURE 6

hFE

1,000

—

—

VcE(sat)

—

vBE(sat)

—

—

-1.5

-2.0

—

-2.5

CCBO

—

—

220

switching characteristics

Resistive Load

Delay Time + Rise Time

IC = -10A, IBI = lB2 = -20mA td + tr

—

0.6

—

Storage Time

Fall Time

VGC = -^V. lp = 25jusec

ts

—

2.0

—

tf

—

0.5

—

(1) Pulse Test: PW < 300ms Duty Cycle < 2%.

UNIT

Volts

,A

M

—

V

V

Volts

PF

MS

2

5

10

20

IC-COLLECTOR CURRENT-AMPERES

FIG. 1 TYPICAL SATURATION VOLTAGE CHARACTERISTICS

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