STTH3R02-Y 查看數據表（PDF） - STMicroelectronics
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STTH3R02-Y Datasheet PDF : 8 Pages
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Characteristics
1
Characteristics
STTH3R02-Y
Table 2. Absolute ratings (limiting values at Tj = 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM Repetitive peak reverse voltage
Tj = -40 °C
200
V
IF(AV) Average forward current, square waveform TL = 109 °C δ = 0.5
3
A
IFSM
Surge current non repetitive forward current
tp = 8.3 ms
sinusoidal
80
A
Tstg Storage temperature range
-65 to + 175 °C
Tj(1) Operating temperature range
-40 to + 175 °C
1.
dPtot
dTj
<1
Rth(j-a)
condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistance
Symbol
Parameter
Typ.
Rth(j-l) Junction to lead
15
Max.
23
Unit
°C/W
Table 4. Static electrical characteristics
Symbol
Parameter
Tests conditions
Min. Typ. Max. Unit
IR(1) Reverse leakage current
VF(2) Forward voltage drop
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 150 °C
VR = VRRM
IF = 3A
1.6
µA
2
16
0.91 1.02
V
0.72 0.83
To evaluate the conduction losses use the following equation:
P = 0.71 x IF(AV) + 0.04 x IF2(RMS)
2/8
DocID027545 Rev 1
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