STM32WB55VC 查看數據表（PDF） - STMicroelectronics
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STM32WB55VC
STMicroelectronics
STM32WB55VC Datasheet PDF : 193 Pages
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STM32WB55xx STM32WB35xx
Electrical characteristics
6.3.9
Wakeup time from Low-power modes and voltage scaling
transition times
The wakeup times given in Table 51 are the latency between the event and the execution of
the first user instruction.
The device goes in Low-power mode after the WFE (Wait For Event) instruction.
Table 51. Low-power mode wakeup timings(1)
Symbol
Parameter
Conditions
Wakeup time from
tWUSLEEP Sleep mode
-
to Run mode
Wakeup time from
Wakeup in Flash with memory in power-down
tWULPSLEEP Low-power sleep mode during low-power sleep mode (FPDS = 1 in
to Low-power run mode PWR_CR1) and with clock MSI = 2 MHz
tWUSTOP0
Wake up time from
Stop 0 mode
to Run mode in Flash
memory
Range 1
Range 2
Wake up time from
Range 1
Stop 0 mode
to Run mode in SRAM1 Range 2
Wake up time from
Range 1
Stop 1 mode
to Run in Flash memory
SMPS bypassed
Range 2
tWUSTOP1
Wake up time from
Stop 1 mode
to Run in SRAM1
SMPS bypassed
Range 1
Range 2
Wake up time from
Stop 1 mode to
Low-power run mode
in Flash memory
Wake up time from
Stop 1 mode to
Low-power run mode
in SRAM1
Regulator in
Low-power
mode (LPR = 1
in PWR_CR1)
Wakeup clock MSI = 32 MHz
Wakeup clock HSI16 = 16 MHz
Wakeup clock HSI16 = 16 MHz
Wakeup clock MSI = 4 MHz
Wakeup clock MSI = 32 MHz
Wakeup clock HSI16 = 16 MHz
Wakeup clock HSI16 = 16 MHz
Wakeup clock MSI = 4 MHz
Wakeup clock MSI = 32 MHz
Wakeup clock HSI16 = 16 MHz
Wakeup clock HSI16 = 16 MHz
Wakeup clock MSI = 4 MHz
Wakeup clock MSI = 32 MHz
Wakeup clock HSI16 = 16 MHz
Wakeup clock HSI16 = 16 MHz
Wakeup clock MSI = 4 MHz
Wakeup clock MSI = 4 MHz
Typ Max Unit
9 10
No. of
CPU
cycles
9 10
2.38 2.96
1.69 2.00
1.70 2.01
7.43 8.59
2.63 3.00
1.80 2.00
1.82 2.02
7.58 8.70
4.67 5.56
5.09 6.03
5.08 6.00
µs
8.36 9.28
4.88 5.55
5.29 5.95
5.28 5.96
8.49 9.30
7.96 9.59
8.00 9.47
DS11929 Rev 10
117/193
169
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