DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

STM32WB55VC 查看數據表(PDF) - STMicroelectronics

零件编号
产品描述 (功能)
生产厂家
STM32WB55VC Datasheet PDF : 193 Pages
First Prev 131 132 133 134 135 136 137 138 139 140 Next Last
Electrical characteristics
STM32WB55xx STM32WB35xx
Table 75. NRST pin characteristics(1)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VIL(NRST)
NRST input
low level voltage
VIH(NRST)
NRST input
high level voltage
-
-
-
0.3 x VDD
V
-
0.7 x VDD
-
-
Vhys(NRST)
NRST Schmitt trigger
voltage hysteresis
-
-
200
-
mV
RPU
Weak pull-up
equivalent resistor(2)
VIN = VSS
25
40
55
k
VF(NRST)
NRST input
filtered pulse
-
-
-
VNF(NRST)
NRST input
not filtered pulse
1.71 V VDD 3.6 V
350
-
70
ns
-
1. Guaranteed by design.
2.
The pull-up is designed
the series resistance is
mwiitnhimaatrlu(e~1re0s%is)t.ance
in
series
with
a
switchable
PMOS.
This
PMOS
contribution
to
Figure 28. Recommended NRST pin protection
External
reset circuit(1)
NRST(2)
0.1 μF
VDD
RPU
Filter
Internal reset
MS19878V3
1. The reset network protects the device against parasitic resets.
2. TTahbeleus7e5r,motuhsetrewnisseurtehethraetstehtewleillvneol ot nbethteakNeRn SinTtopaincccoaunngtobybethloewdtehveicVeI.L(NRST) max level specified in
3. The external capacitor on NRST must be placed as close as possible to the device.
138/193
DS11929 Rev 10

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]